Fast Electromigration Immortality Analysis for Multisegment Copper Interconnect Wires
نویسندگان
چکیده
منابع مشابه
Electromigration Modeling for Interconnect Structures in Microelectronics
Electromigration is one of the most important reliability issues in semiconductor technology. Its complex character demands comprehensive physical modeling as basis for analysis. Simulation of electromigration induced interconnect failure focuses on the life-cycle of intrinsic voids, which consists of two distinct phases: void nucleation and void evolution. We present models for both phases as ...
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We have analyzed the stress build-up and vacancy dynamics due to material transport caused by electromigration in dual-damascene interconnect structures. Our model incorporates all relevant driving forces for material transport with a complete integration of mechanical stress in connection with microstructural aspects. First, it is shown that the addition of redundant vias can be effective in i...
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We have developed a novel physical model and a simulation algorithm capable of predicting electromigration (EM) induced void nucleation and growth in an arbitrary interconnect segment. Incorporation of all imp ortant atom migration causes into the mass balance equation and its coupled solution with the corresponding electromagnetics, heat transfer and elasticity problems has provided a capabili...
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Electromigration versus line width in the 0.12–10 lm range and the configuration of the via/line contact in dual damascene Cu has been investigated. There are two scenarios for width scaling impact on electromigration. One is the width < 1 lm region, in which the MTF shows a weak width dependence, except for the via-limited condition. The other is the width > 1 lm region, in which the MTF shows...
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ژورنال
عنوان ژورنال: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
سال: 2018
ISSN: 0278-0070,1937-4151
DOI: 10.1109/tcad.2018.2801221